发明名称 |
Reduzierung der Kontamination von Halbleitersubstraten während der Aufbringung der Metallisierung durch Ausführen eines Abscheide/Ätzzyklus während der Barrierenabscheidung |
摘要 |
A conductive barrier material of a metallization system of a semiconductor device may be formed on the basis of one or more deposition/etch cycles, thereby providing a reduced material thickness in the bevel region, while enhancing overall thickness uniformity in the active region of the semiconductor substrate. In some illustrative embodiments, two or more deposition/etch cycles may be used, thereby providing the possibility to select reduced target values for the barrier thickness in the die regions, while also obtaining a significantly reduced thickness in the bevel region. |
申请公布号 |
DE102008030847(B4) |
申请公布日期 |
2010.07.29 |
申请号 |
DE20081030847 |
申请日期 |
2008.06.30 |
申请人 |
ADVANCED MICRO DEVICES INC.;AMD FAB 36 LIMITED LIABILITY COMPANY & CO. KG |
发明人 |
KOSCHINSKY, FRANK;LEHR, MATTHIAS;SCHUEHRER, HOLGER |
分类号 |
H01L21/285;H01L21/3205;H01L21/768 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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