| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN-based field-effect transistor and a method of manufacturing the same by which a current collapse phenomenon hardly affects with a low resistance and a high withstand voltage. SOLUTION: In a GaN-based field-effect transistor (MOSFET) 100, a channel layer 104 made of p-GaN, an electron supply layer 106, and a surface layer 107 having a smaller bandgap energy than the electron supply layer are sequentially stacked on a substrate 101. Further, a recessed portion 108 is formed by partially removing the electron supply layer and the surface layer as deep as the channel layer. On the surface layer, a source electrode 109 and a drain electrode 110 are formed with the recessed portion disposed therebetween. On the surface layer and a surface in the recessed portion including the surface of the channel layer, a gate insulating film 111 is formed. In the recessed portion, a gate electrode 112 is formed on the gate insulating film. COPYRIGHT: (C)2010,JPO&INPIT |
