| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem, wherein when processing a body laminated with a tunnel magnetic resistance effect film by ion milling, a splash matter of material constituting the tunnel magnetic resistance effect film deposits on a sidewall, or the like, of the laminate and contaminates the inside of the apparatus in which the processing is conducted, and hence it is difficult to manufacture a magnetic memory element or a semiconductor device mounting of such a magnetic memory element, while securing stable characteristics. SOLUTION: After forming a sidewall spacer on the sidewall of a conductive layer located on the upper portion of the tunnel magnetic resistance effect film and depositing on the sidewall spacer the splash matter of material constituting the tunnel magnetic resistance effect film under processing, the deposit of the material is removed by removing the sidewall spacer. A method that uses one kind of sidewall spacer and a method that uses two kinds of sidewall spacers are describe. COPYRIGHT: (C)2010,JPO&INPIT
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