| 摘要 |
A non-volatile semiconductor memory device includes: a cell array including a plurality of first wirings, a plurality of second wirings that intersects the plurality of first wirings, and memory cells that are formed at intersections of the first wirings and the second wirings and are connected between the first and second wirings; a first contact plug that comes into contact with a side portion of the first wiring provided at a first position and extends to the first wiring provided at a second position higher than the first position in a laminated direction; and a second contact plug that comes into contact with a side portion of the second wiring provided at a third position between the first position and the second position and extends to the second wiring provided at a fourth position higher than the second position in the laminated direction.
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