COPPER PASSIVATING POST-CHEMICAL MECHANICAL POLISHING CLEANING COMPOSITION AND METHOD OF USE
摘要
<p>Alkaline aqueous cleaning compositions and processes for cleaning post- chemical mechanical polishing (CMP) residue, post-etch residue and/or contaminants from a microelectronic device having said residue and contaminants thereon. The alkaline aqueous cleaning compositions include amine, passivating agent, and water. The composition achieves highly efficacious cleaning of the residue and contaminant material from the microelectronic device while simultaneously passivating the metal interconnect material.</p>
申请公布号
SG162725(A1)
申请公布日期
2010.07.29
申请号
SG20100036705
申请日期
2006.05.25
申请人
ADVANCED TECHNOLOGY MATERIALS, INC.
发明人
BARNES, JEFFREY;WALKER, ELIZABETH;PETERS, DARRYL W.;BARTOSH, KYLE;OLDAK, EWA;YANDERS, KEVIN P.