发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 There is provided a layout structure of a semiconductor integrated circuit capable of preventing the thinning of a metal wiring line close to a cell boundary and wire breakage therein without involving increases in the amount of data for OPC correction and OPC process time. In a region interposed between a power supply line and a ground line each placed to extend in a first direction, first and second cells each having a transistor and an intra-cell line each for implementing a circuit function are placed to be adjacent to each other in the first direction. In a boundary portion between the first and second cells, a metal wiring line extending in a second direction orthogonal to the first direction is placed so as not to short-circuit the power supply line and the ground line.
申请公布号 US2010187699(A1) 申请公布日期 2010.07.29
申请号 US20090524998 申请日期 2009.02.24
申请人 发明人 NISHIMURA HIDETOSHI;SHIMBO HIROYUKI;TOUBOU TETSUROU;TANIGUCHI HIROKI;YONEDA HISAKO
分类号 H01L23/49 主分类号 H01L23/49
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