发明名称 |
Method for low temperature growth of inorganic materials from solution using catalyzed growth and re-growth |
摘要 |
The present invention involves a method and apparatus for depositing a silicon oxide onto a substrate from solution at low temperatures in a manner that produces homogeneous growth of the silicon oxide. The method generally comprises the following steps: (a) Chemically treating a substrate to activate it for growth of the silicon oxide. (b) Immersing the treated substrate into a bath with a reactive solution. (c) Regenerating the reactive solution to allow for continued growth of the silicon oxide. In another embodiment of the present invention, the apparatus includes a first container holding a reactive solution, a substrate on which the silicon oxide is deposited, a second container holding silica, and a means for adding silica to the reactive solution.
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申请公布号 |
US2010186665(A1) |
申请公布日期 |
2010.07.29 |
申请号 |
US20100751434 |
申请日期 |
2010.03.31 |
申请人 |
WILLIAM MARSH RICE UNIVERSITY |
发明人 |
BARRON ANDREW R.;WHITSITT ELIZABETH ANNE |
分类号 |
B05C17/01;C23C8/02;C23C8/40;C23C18/00;H01L21/316 |
主分类号 |
B05C17/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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