发明名称 |
SOLID-STATE IMAGING ELEMENT, SOLID-STATE IMAGING DEVICE, CAMERA, AND DRIVE METHOD |
摘要 |
The semiconductor element according to an aspect of the present invention is a solid-state imaging element formed on a semiconductor substrate, having an overflow drain structure for draining excessive charges generated in photoelectric conversion elements, and reading out signal charges accumulated in the photoelectric conversion elements to a vertical transfer unit via a readout gate electrode. The solid-state imaging element includes: a first voltage generating circuit which applies, to the semiconductor substrate, substrate voltage defining the height of overflow barrier in the overflow drain structure; and a second voltage generating circuit which selectively generates first voltage and second voltage each including the height of pulse wave superimposed onto the substrate voltage, at a time when readout pulse to be applied to the readout gate electrode is generated.
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申请公布号 |
US2010188536(A1) |
申请公布日期 |
2010.07.29 |
申请号 |
US20080670040 |
申请日期 |
2008.07.09 |
申请人 |
PANASONIC CORPORATION |
发明人 |
HASUKA TSUYOSHI;KURIYAMA TOSHIHIRO;MORI HIROYUKI;MANABE JUNJI |
分类号 |
H01L27/148;H01L31/101;H04N5/335;H04N5/347;H04N5/359;H04N5/369;H04N5/372 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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