RESISTANCE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a resistance memory device capable of achieving a highly dense memory array by a simple manufacturing method, and to provide a method of manufacturing the same. SOLUTION: The method of manufacturing the resistance-memory device 1 includes a step of forming a bit-line stack with a plurality of local bit lines vertically stacked on a substrate; forming word lines including a plurality of local word lines vertically extended at the side of the bit-line stack and a connection line horizontally extended to connect the plurality of local word lines; and forming a resistance memory thin film between the bit-line stack and the word lines. Accordingly, the highly dense memory array can be achieved with a three-dimensional cross-point architecture selected as the simple manufacturing method. COPYRIGHT: (C)2010,JPO&INPIT