| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a bonding wire for a semiconductor device having high strength and high bending stiffness conforming to the trends of narrower pitches and thinner and longer wires, improved bondability at both the ball and wedge portions, and excellent industrial mass-productivity and usability in high speed bonding. <P>SOLUTION: A bonding wire for semiconductor comprises an outer peripheral part 2 formed of a conductive metal, a core 1 made of an alloy formed mainly of the metal, and a diffusion layer 3 disposed between the core and the outer peripheral part, the diffusion layer having a concentration gradient. Further, a bonding wire for semiconductor comprises a core formed of a first metal having a conductivity or an alloy formed mainly of the first metal, an outer peripheral part formed of a second metal having a conductivity different from that of the first metal of the core or an alloy formed mainly of the second metal, and a diffusion layer disposed between the core and the outer peripheral part, the diffusion layer having a concentration gradient. <P>COPYRIGHT: (C)2010,JPO&INPIT |
