METHOD FOR CONTROLLING THRESHOLD VOLTAGE OF TRANSISTOR CHANGED BY SCATTERING DURING IMPLANTATION,申请号KR20030044019-传众专利搜索

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发明名称	METHOD FOR CONTROLLING THRESHOLD VOLTAGE OF TRANSISTOR CHANGED BY SCATTERING DURING IMPLANTATION
摘要
申请公布号	KR100972859(B1)	申请公布日期	2010.07.28
申请号	KR20030044019	申请日期	2003.06.30
申请人		发明人
分类号	H01L21/265	主分类号	H01L21/265
代理机构		代理人
主权项
地址

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