MASK FOR SOLIDIFICATION, SOLIDIFICATION METHOD USTING THE SAME AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME

摘要

PURPOSE: A mask for crystallization, a crystallization method using the same, and a method for manufacturing a thin film transistor array panel including the same are provided to form an identical crystallized shape of a thin film transistor by selectively crystallizing a part of an amorphous silicon layer in which the channel of the thin film transistor is formed. CONSTITUTION: A blocking layer(111) is formed on an insulating substrate(110). An alignment key(117) is formed by patterning the blocking layer. An amorphous silicon layer(150) is formed on the blocking layer. A mask(500) for crystallization is aligned on the amorphous silicon layer using the alignment key. The amorphous silicon layer is locally crystallized in order to form a plurality of poly-crystalline silicon region.