发明名称 Test structure for monitoring leakage currents in a metallization layer
摘要 By providing a plurality of resistors and a plurality of test patterns within a leakage current test structure, the number of probe pads required for estimating the plurality of test patterns may be significantly reduced, wherein, in some illustrative embodiments, several test patterns may be simultaneously assessed on the basis of two probe pads. Consequently, process parameters and/or design parameters for manufacturing metallization structures of semiconductor devices may be efficiently monitored and controlled.
申请公布号 US7764078(B2) 申请公布日期 2010.07.27
申请号 US20070623372 申请日期 2007.01.16
申请人 GLOBALFOUNDRIES INC. 发明人 FEUSTEL FRANK;WERNER THOMAS;PETERS CARSTEN
分类号 G01R31/26;G01R31/36;H01L23/58 主分类号 G01R31/26
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