| 摘要 |
A silicon-controlled rectifier apparatus, comprising a substrate upon which a low-voltage triggered silicon-controlled rectifier is configured. A plurality of triggering components (e.g., NMOS fingers) are formed upon the substrate and integrated with the low-voltage triggered silicon-controlled rectifier, wherein the plurality of triggering components are inserted into the low-voltage triggered silicon-controlled rectifier in order to permit the low-voltage triggered silicon-controlled rectifier to protect against electrostatic discharge during human-body model and charged-device model stress events.
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