发明名称 |
Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and electronic device |
摘要 |
A single crystal semiconductor layer is formed over a substrate having an insulating surface by the following steps: forming an ion doped layer at a given depth from a surface of a single crystal semiconductor substrate; performing plasma treatment to the surface of the single crystal semiconductor substrate; forming an insulating layer on the single crystal semiconductor substrate to which the plasma treatment is performed; bonding the single crystal semiconductor substrate to the substrate having the insulating surface with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate using the ion doped layer as a separation surface. As a result, a semiconductor substrate in which a defect in an interface between the single crystal semiconductor layer and the insulating layer is reduced can be provided.
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申请公布号 |
US7763502(B2) |
申请公布日期 |
2010.07.27 |
申请号 |
US20080213308 |
申请日期 |
2008.06.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD |
发明人 |
KAKEHATA TETSUYA;KURIKI KAZUTAKA |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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