| 摘要 |
A method of manufacturing a semiconductor device includes preparing a semiconductor substrate having an electrode pad, a passivation film having an opening overlapping the electrode pad and an oxidized film formed in the opening, forming a resin projection on the passivation film, forming a metal layer on the passivation film and the resin projection, and forming an electrically connecting portion for connecting the electrode pad to the metal layer by substituting an electrical conductor for at least a part of the oxidized film.
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