发明名称 |
Lateral MOS device with minimization of parasitic elements |
摘要 |
A lateral MOS device is formed in a body having a surface and is formed by a semiconductor layer of a first conductivity type; a drain region of a second conductivity type, formed in the semiconductor layer and facing the surface; a source region of the second conductivity type, formed in the semiconductor layer and facing the surface; a channel of the first conductivity type, formed in the semiconductor layer between the drain region and the source region and facing the surface; and an insulated gate region, formed on top of the surface over the channel region. In order to improve the dynamic performance, a conductive region extends only on one side of the insulated gate region, on top of the drain region but not on top of the insulated gate region.
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申请公布号 |
US7763936(B2) |
申请公布日期 |
2010.07.27 |
申请号 |
US20050223796 |
申请日期 |
2005.09.08 |
申请人 |
STMICROELECTRONICS, S.R.L. |
发明人 |
SANTANGELO ANTONELLO;CASCINO SALVATORE;GERVASI LEONARDO |
分类号 |
H01L29/94;H01L21/336;H01L29/06;H01L29/10;H01L29/417;H01L29/78 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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