| 摘要 |
A method for metallization of ceramic plates comprises deposition of a thick film semiconductor layer, when deposition of the said film a conductor paste is used which comprises as a metal fine-dispersed powder a silver fine-dispersed powder and additionally comprises a borosilicate glass fine-dispersed powder, a glass-ceramic sealant fine-dispersed powder, high-temperature processing of this conductor paste layer is performed in air at temperature (820-925) °C, palladium activation of annealing the thick film semiconductor layer is performed selectively via printing on selected arias using catalytic paste which comprises a fine-dispersed palladium powder, so-polymer of polymethacrylate butyl and polymethacrylate metyl L-50 HEKOL, adipinic acid, aerosil, organic bond, thereafter high-temperature processing a print of catalytic paste is performed in air at temperature of (400-420) °C, chemical nickel plating of active arias of the thick film semiconductor layer is made in water solution additionally comprising cobaltichloride, adipinic acid, sodium fluoride and sodium hydrate. |
