METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Disclosed is a method for manufacturing a semiconductor device, which comprises: a step (a) wherein an interlayer insulating film is formed on a substrate; a step (b) wherein the interlayer insulating film is provided with a wiring line; a step (c) wherein the upper surface of the wiring line and the upper surface of the interlayer insulating film are coated with an organic solution; a step (d) wherein the upper surface of the wiring line and the upper surface of the interlayer insulating film are coated with a silylating solution after the step (c); a step (e) wherein the substrate is heated after the step (d); and a step (f) wherein a first liner insulating film is formed at least on the upper surface of the wiring line.