| 摘要 |
A surface of a compound semiconductor crystal of Group II-VI elements of Periodic Table can be cleaned to obtain a mirror surface suitable for epitaxial growth, without deteriorating the smoothness of the surface after etching. The feature of a method of cleaning a surface of the compound semiconductor crystal consists in using an etching solution consisting of an aqueous solution of a mixture of sulfuric acid and water in a proportion by volume of 1 to 10 parts of sulfuric acid to 1 part of water, saturated with potassium dichromate, etching the compound semiconductor crystal of Group II-VI elements of Periodic Table with the etching solution at a temperature within a range of 10 to 80 DEG C, and if necessary, washing with water at a temperature of from 10 DEG C to the boiling point, methanol or isopropyl alcohol, or subjecting to ultrasonic washing or boiling washing in dichloromethane, trichloroethylene or acetone. <IMAGE> |
