发明名称 CONTACT STRUCTURE FOR A SEMICONDUCTOR AND METHOD FOR PRODUCING THE SAME
摘要 A semiconductor component comprising a substrate with a first side and a second side a multi-layer contact structure arranged on at least one side of the substrate, the contact structure exhibiting a barrier layer to prevent the diffusion of ions from the side of barrier layer opposite to the substrate into the substrate.
申请公布号 US2010181670(A1) 申请公布日期 2010.07.22
申请号 US20080602232 申请日期 2008.06.19
申请人 KRAUSE ANDREAS;BITNAR BERND;NEUHAUS HOLGER;KUTZER MARTIN 发明人 KRAUSE ANDREAS;BITNAR BERND;NEUHAUS HOLGER;KUTZER MARTIN
分类号 H01L23/52;H01L21/768 主分类号 H01L23/52
代理机构 代理人
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