NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING NON-VOLATILE MEMORY DEVICE

摘要

Provided are nonvolatile memory devices with a three-dimensional structure and methods of fabricating the same. The nonvolatile memory device includes conductive patterns three-dimensionally arranged on a semiconductor substrate, semiconductor patterns that extend from the semiconductor substrate and intersect one-side walls of the conductive patterns, charge storage layers interposed between the semiconductor patterns and one-side walls of the conductive patterns, and seed layer patterns interposed between the charge storage layers and one-side walls of the conductive patterns.