发明名称 |
STRUCTURE AND METHOD FOR FORMING PROGRAMMABLE HIGH-K/METAL GATE MEMORY DEVICE |
摘要 |
A method of fabricating a memory device is provided that may begin with forming a layered gate stack overlying a semiconductor substrate and patterning a metal electrode layer stopping on the high-k gate dielectric layer of the layered gate stack to provide a first metal gate electrode and a second metal gate electrode on the semiconductor substrate. In a next process sequence, at least one spacer is formed on the first metal gate electrode overlying a portion of the high-k gate dielectric layer, wherein a remaining portion of the high-k gate dielectric is exposed. The remaining portion of the high-k gate dielectric layer is etched to provide a first high-k gate dielectric having a portion that extends beyond a sidewall of the first metal gate electrode and a second high-k gate dielectric having an edge that is aligned to a sidewall of the second metal gate electrode. |
申请公布号 |
US2010181620(A1) |
申请公布日期 |
2010.07.22 |
申请号 |
US20090355954 |
申请日期 |
2009.01.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOOTH, JR. ROGER A.;CHENG KANGGUO;KOTHANDARAMAN CHANDRASEKHARAN;PEI CHENGWEN |
分类号 |
H01L29/786;H01L21/331;H01L21/336;H01L21/8232;H01L21/8234;H01L27/115;H01L29/78 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|