发明名称 READ ASSIST FOR MEMORY CIRCUITS
摘要 <p>A method increases stability of a memory circuit by pre-charging at least one bit line of the memory circuit to a first voltage, pre-charging at least one other bit line of the memory circuit to a second voltage, and equalizing charge across the bit lines so that the bit lines are pre-charged with a third voltage.</p>
申请公布号 WO2010048245(A9) 申请公布日期 2010.07.22
申请号 WO2009US61411 申请日期 2009.10.21
申请人 QUALCOMM INCORPORATED;CHEN, NAN;CHABA, RITU 发明人 CHEN, NAN;CHABA, RITU
分类号 G11C7/12;G11C11/419 主分类号 G11C7/12
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