| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which transfer voltage to a word line can be compensated even when a property of a drive transistor of a word line is deteriorated. <P>SOLUTION: A voltage generating circuit 91 generates first voltage being higher than write-in voltage during write-in and generates erasing voltage during erasure. In a first transistor Tr_LIM, first voltage generated by the voltage generating circuit is supplied to one end of a current path and a gate, and write-in voltage is output from the other end of the current path. In a drive transistor Tr_0, Tr_1, Tr_2, ..., one end of the current path is connected to the word line, the first voltage is supplied to the gate, and the write-in voltage is supplied to the other end of the current path. A stress apply means 96 supplies erasure voltage to the other end of the current path of the first transistor during erasure. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
