| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistance variable memory device and a method of fabricating the same. SOLUTION: The resistance variable memory device includes at least one bottom electrode, a first insulating layer containing a trench which exposes the at least one bottom electrode, and a resistance variable material layer including respective first and second portions located on opposite sidewalls of the trench, respectively, where the first and second portions of the resistance variable material layer are electrically connected to the at least one bottom electrode. The device further includes a protective layer covering the resistance variable material layer within the trench, and a second insulating layer located within the trench and covering the protective layer within the trench. COPYRIGHT: (C)2010,JPO&INPIT |
