| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent particles generated by epitaxial growth reaction from falling in association with opening or closing operation of a cover of a chamber. Ž<P>SOLUTION: The chemical vapor deposition apparatus includes a substrate ceiling defining a reaction chamber into which a reaction gas is supplied and in which a substrate is epitaxially grown, and an exhaust separatable from the substrate ceiling and from which an exhaust gas after the epitaxial growth reaction is discharged. The exhaust is provided with a particle formation part on which particles generated upon the epitaxial growth of the substrate are deposited. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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