| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a movable gate type field effect transistor, capable of increasing the magnitude of drain current by adopting a source-drain structure which increases a channel width. Ž<P>SOLUTION: The movable gate type field effect transistor 1 includes a plurality of linear source electrodes 17 and a plurality of drain electrodes 18 which are alternately disposed substantially in parallel. Thus, since a plurality of channels 21 is formed between the source electrodes 17 and the drain electrodes 18, the overall length of the channel width is significantly extended, compared with the length of a movable gate 15, and a large drain current can be taken out. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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