| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor, along with its manufacturing method which includes an oxide semiconductor film, indicating a normally-off TFT characteristic. SOLUTION: If an oxide of one or more kinds selected from among a group consisting of lanthanum trioxide, neodymium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, and ytterbium oxide, as well as, indium oxide is set as M<SB>2</SB>O<SB>3</SB>, the thin-film transistor contains the oxide semiconductor film where the value of atomic ratio M/(In+M) is 0.1 or more and 0.4 or less. COPYRIGHT: (C)2010,JPO&INPIT |
