发明名称 Reduction of Drift in Phase-Change Memory via Thermally-Managed Programming
摘要 A method of programming a phase-change material. The method includes providing a transformation pulse to the phase-change material, where the transformation pulse includes a programming waveform and a conditioning waveform. The programming waveform provides sufficient energy to alter the structural state of the phase-change material. In one embodiment, the programming waveform alters the volume fractions of crystalline and amorphous phase regions within the phase-change material. The conditioning waveform provides sufficient energy to heat the phase-change material to a temperature above the ambient temperature but below the crystallization temperature of the phase-change material. The method programs the phase-change material to a state that exhibits a reduced time variation of resistance.
申请公布号 US2010182826(A1) 申请公布日期 2010.07.22
申请号 US20090356236 申请日期 2009.01.20
申请人 CZUBATYJ WOLODYMYR 发明人 CZUBATYJ WOLODYMYR
分类号 G11C11/00;G11C7/00 主分类号 G11C11/00
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