发明名称 METHOD AND APPARATUS FOR ION IMPLANTATION OF NON-GASEOUS ELEMENTS
摘要 PURPOSE: A method and a device for implanting a solid element plasma ion are provided to implement a high function of a surface property by efficiently implanting a solid element ion to the surface of a sample at a room temperature. CONSTITUTION: An evaporator(24) is prepared for a thin film deposition. A vacuum state is maintained inside a vacuum chamber(10). A sample mount(13) is installed on the opposite position to the evaporator inside a vacuum chamber. A first power supply unit applies first power to the evaporator. The first power supply unit implants the plasma ions of the solid element sputtered from the evaporator to the surface of a sample(12).
申请公布号 KR20100083545(A) 申请公布日期 2010.07.22
申请号 KR20090002986 申请日期 2009.01.14
申请人 KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 HAN, SEUNG HEE;BYUN, JI YOUNG;SEOK, HYUN KWANG;HAN, JUN HYUN;KIM, YU CHAN;LEE, SUNG BAI;CHOI, JIN YOUNG
分类号 H01L21/265;C23C14/48 主分类号 H01L21/265
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