| 摘要 |
<p>The present invention provides a method for the production of semiconductor ribbons using exclusively a gaseous feedstock. A fine powder of semiconductor material is produced by decomposition, within the gas phase, of a gaseous feedstock. A layer of this semiconductor powder is uniformly distributed, compressed and flattened over a planar substrate, which is continuously moving in one direction. This said layer of semiconductor powder is, in the following stage, heated to a temperature sufficient to decompose the said gaseous feedstock on its surface. A continuous flow of the said gaseous feedstock over said powder layer is ensured so that a solid plate of semiconductor material grows over the said layer of semiconductor powder. After the growth stage, during which the solid plate has grown to a convenient thickness, the said solid plate of semiconductor material is separated from the said layer of semiconductor powder and substrate. This self supporting plate is then heated to a high temperature in an atmosphere containing gaseous feedstock to complete its growth and become a ribbon with the appropriate structural properties for further processing. The present invention is applicable, for example, in the industry of silicon ribbon production for photovoltaic application.</p> |
