发明名称 Semiconductor device including an internal voltage generation circuit and a first test circuit
摘要 According to an aspect of the invention, there is provided, a semiconductor device, including an internal voltage generation circuit generating a prescribed voltage, a first test circuit connecting to a voltage-supplying wiring, one end of the voltage-supplying wiring being connected to a source wiring and the other end of the voltage-supplying wiring being connected to the internal voltage generation circuit, the first test circuit being supplied an outer voltage from the source wiring and a voltage of the internal voltage generation circuit through the voltage-supplying wiring, the first test circuit generating a prescribed resistance value on a basis of a control input from an outer portion in a test mode.
申请公布号 US7759928(B2) 申请公布日期 2010.07.20
申请号 US20070937056 申请日期 2007.11.08
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 OGIWARA RYU;TAKASHIMA DAISABURO
分类号 G01R31/02 主分类号 G01R31/02
代理机构 代理人
主权项
地址