| 摘要 |
A method for fabricating a solid-state imaging device comprises: a step of forming a photodiode protection insulation film 6a; a step of forming a dummy protection insulation film 6c corresponding to the photodiode protection insulation film 6a both in the peripheral circuit region 1b and the scribe lane region 1c; and a step of forming an interlayer insulation film 9 for covering all three regions of a pixel region 1a in which pixels and the photodiode protection insulation film 6a are formed, a peripheral circuit region 1b in which a driving circuit and the dummy protection insulation film 6c are formed, and a scribe lane region 1c in which the dummy protection insulation film 6c is formed, wherein the dummy protection insulation film 6c causes an average height of a surface of the interlayer insulation film 9 included in each of the peripheral circuit region 1b and the scribe lane region 1c to be close to an average height of a surface of the interlayer insulation film 9 included in the pixel region 1a, before a CMP is performed on an entirety of the surface thereof.
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