发明名称 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE WITH THE SAME, AND ADDITIVE FOR COMPOSITION FOR FORMING RESIST UNDERLAYER FILM
摘要 [PROBLEMS] To provide a composition for forming a resist underlayer film which has improved adhesion to an upper resist layer and inhibits resist pattern falling. [MEANS FOR SOLVING PROBLEMS] The composition for forming a resist underlayer film is one for lithography which comprises a polymer having silicon atoms in the backbone, a compound of a polycyclic structure, and an organic solvent. The compound of a polycyclic structure has at least two carboxy groups as substituents, and the two carboxy groups have been bonded respectively to adjoining two carbon atoms as members of the polycyclic structure. Both of the two carboxy groups are of the endo configuration or exo configuration, or they are of the cis configuration.
申请公布号 KR20100082844(A) 申请公布日期 2010.07.20
申请号 KR20107009274 申请日期 2008.09.30
申请人 NISSAN CHEMICAL INDUSTRIES, LTD. 发明人 NAKAJIMA MAKOTO;SUZUKI HIDEO
分类号 G03F7/11 主分类号 G03F7/11
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