发明名称 |
ASYNCHRONOUS MULTI-BIT OTP MEMORY CELL AND ASYNCHRONOUS MULTI-BIT OTP MEMORY DEVICE, PROGRAMMING METHOD AND READ OUT METHOD OF THE SAME |
摘要 |
PURPOSE: An asynchronous multi-bit OTP memory cell and an asynchronous multi-bit OTP memory device are provided to reduce the whole layout by storing n-bit of data in one OTP cell. CONSTITUTION: An OTP memory cell array(410) comprises at least two asynchronous multi-bit OTP memory cells. A controller(420) generates mode control signals for controlling a program mode or a read mode. A power switch circuit(430) switches a first voltage to a second voltage or a third voltage. A row decoder(440) decodes a row address signal. A word line driving circuit(450) drives at least two program word lines and at least read word lines. A column decoder(460) decodes a column address signal. A source line driver circuit(470) drives a corresponding source line. The source line switch enable circuit(480) generates a source line switch enable signal.
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申请公布号 |
KR20100082046(A) |
申请公布日期 |
2010.07.16 |
申请号 |
KR20090001335 |
申请日期 |
2009.01.08 |
申请人 |
CHANGWON NATIONAL UNIVERSITY INDUSTRY ACADEMY COOPERATION CORPS |
发明人 |
KIM, YOUNG HEE |
分类号 |
G11C16/00;G11C11/21 |
主分类号 |
G11C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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