发明名称 HIGH-RATE GROOVE PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a polishing pad for an increase in wafer yield by increasing removal rate to increase throughput. <P>SOLUTION: The polishing pad includes a center, an inner region surrounding the center, and a transition region connecting grooves from the inner region to an outer region surrounding the inner region. The outer region has multiple grooves with high-rate paths. The transition region is adjacent to the outer region and within a radius from the center defined as follows, and the inner region is to be the origin of continuous grooves extended without a break to the outer region. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010155339(A) 申请公布日期 2010.07.15
申请号 JP20090288690 申请日期 2009.12.21
申请人 ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC 发明人 MULDOWNEY GREGORY P
分类号 B24B37/00;H01L21/304 主分类号 B24B37/00
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