| 摘要 |
A solid-state image capturing apparatus is manufactured, which has a high sensitivity and high resolution with no color filter or no on-chip microlens required and with no shading generated or no variance in performance between pixel sections. In a solid-state image capturing apparatus 1, a plurality of pixel sections 2 (solid-state image capturing devices), each having light receiving sections 21 to 23 laminated in a depth direction of a semiconductor substrate 3, is repeatedly arranged according to a sequence in a direction along a plane of the semiconductor substrate 3. For incident light, electromagnetic waves having wavelength bands corresponding to the depths of the respective light receiving sections 21 to 23 are detected at the light receiving sections 21 to 23 in accordance with the wavelength dependency of optical absorption coefficient of semiconductor substrate material, and signal charges are generated. The pixel sections 2 are electrically separated from each other by pixel separation section diffusion layers 4. Wiring layers 71 to 73, which forms transfer paths for transferring signal charges from the light receiving sections 21 to 23, and the required number of transistors 5 are provided on the surface of the semiconductor substrate 3, which is the opposite side of the electromagnetic wave incidence side.
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