| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress foreign matters from splashing due to a thermal spraying material from an inner wall of a processing chamber for executing the processing such as the etching to a semiconductor device. <P>SOLUTION: In the method for forming a thermal spray coating, by which the thermal spray coating is formed by using a thermal spraying machine on a component in contact with plasma in a vacuum processing chamber in a plasma etching apparatus for generating plasma by supplying the high frequency energy to raw gas introduced inside the vacuum processing chamber, and executing the plasma etching to a material arranged inside the vacuum processing chamber, the thermal spraying machine has a thermal spraying machine body 107 which heats and melts a thermal spraying material by a thermal spraying flame, and sprays it on an objective covering surface, and a blocking plate 109 arranged between the body and the objective covering surface 111. Thermal spraying particles flying to the objective covering surface along the flow of an outer peripheral part of the thermal spraying flame are blocked by the blocking plate. <P>COPYRIGHT: (C)2010,JPO&INPIT |
