| 摘要 |
A semiconductor device includes a first insulated-gate field-effect transistor which is disposed on a semiconductor substrate having an element formation plane in a (110) plane direction, and which has a channel length direction in a <−110> direction, a second insulated-gate field-effect transistor which is disposed on the semiconductor substrate, has a channel length direction in the <−110> direction, and neighbors the first insulated-gate field-effect transistor in the channel length direction, and a first liner insulation film which is provided in a manner to cover the first and second insulated-gate field-effect transistors, the first liner insulation film including a piezomaterial, having a positive expansion coefficient, and applying a compressive stress by operation heat to the first and second insulated-gate field-effect transistors in the channel length direction.
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