| 摘要 |
PROBLEM TO BE SOLVED: To reliably transfer a transfer voltage to a word line irrespective of a size of the transfer voltage. SOLUTION: The nonvolatile semiconductor memory device includes: a boost circuit 22 for generating a first voltage; a voltage step-down circuit 24 including a first circuit 25 having a first voltage drop amount and a second circuit 26 having a second voltage drop amount and configured to decrease the first voltage to a second voltage lower than the first voltage; a transfer transistor 23 for transferring the second voltage to a word line WL; and a control circuit for generating the second voltage as a first write voltage by using both of the first and second circuits in a first mode where the first write voltage equal to or less than a predetermined value is applied to the word line WL, and generating the second voltage as a second write voltage by using one of the first and second circuits in a second mode where the second write voltage exceeding the predetermined value is applied to the word line WL. A difference between the first voltage and the second voltage is equal to or greater than a threshold of the transfer transistor 23. COPYRIGHT: (C)2010,JPO&INPIT
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