| 摘要 |
PROBLEM TO BE SOLVED: To reduce on-resistance and improve reliability in a semiconductor device having an electrode formed in a recessed structure. SOLUTION: As illustrated in Fig.1(b), a first insulating layer 103 is formed on an entire surface. Then, as illustrated in Fig.1(c), photolithography is carried out to form a photoresist pattern 104. Next, as illustrated in Fig.1(d), dry etching is carried out to the first insulating layer 103. Then, as illustrated in Fig.1(e), a laminated semiconductor structure is etched. Next, in this state, wet etching is carried out to the first insulating layer 103 as illustrated in Fig.1(f). Next, in this state, an electrode material 105 is formed on the entire surface as illustrated in Fig.1(g). Next, as illustrated in Fig.1(h), the photoresist pattern 104 is removed. COPYRIGHT: (C)2010,JPO&INPIT |
