NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a nitride semiconductor light-emitting element in which the contact resistance generated between an n-contact layer and an n-side electrode is reduced effectively while maintaining an external quantum efficiency.  Also disclosed is a method for manufacturing the nitride semiconductor light-emitting element with high efficiency. Specifically disclosed is a nitride semiconductor light-emitting element characterized by comprising: a semiconductor laminate comprising a n-type laminate, a light-emitting layer and a p-type laminate; an n-side electrode; and a p-side electrode, wherein the n-type laminate comprises an n-contact layer comprising an AlxGa1-xN material [wherein 0.7=x=1.0] and an n-clad layer arranged on the n-contact layer, and wherein an intermediate layer comprising an AlyGa1-yN material [wherein 0=y=0.5] is arranged on a part of the surface of the n-contact layer which is exposed on the side facing the light-emitting layer.