| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor device reducing a leakage current at OFF time and obtaining a high threshold voltage, and to provide a method of manufacturing the device. <P>SOLUTION: An i-GaN layer 5 (electron transit layer), an n-GaN layer 7 (compound semiconductor layer) formed over the i-GaN layer 5 (electron transit layer) and a source electrode 21s, a drain electrode 21d and a gate electrode 21g, which are formed over the n-GaN layer 7 (compound semiconductor layer), are installed. A recess 7a is formed in a part detached from the gate electrode 21g in a region between the source electrode 21s and the drain electrode 21d of the n-GaN layer 7 (compound semiconductor layer). <P>COPYRIGHT: (C)2010,JPO&INPIT |
