| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging element allowing a sufficient response characteristic to be provided even with a small pixel size. <P>SOLUTION: This solid-state imaging element includes: avalanche photodiodes each having a structure including an n+ region 2 and a p+ region 3 each formed by extending in the thickness direction of a semiconductor substrate 7, and an avalanche region 4 interposed between the n+ region 2 and the p+ region 3; and a pixel repeatedly including the plurality of structures of the avalanche photodiodes. <P>COPYRIGHT: (C)2010,JPO&INPIT |
