| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an improved flash memory device fabrication technique by which low bit line contact resistance can be facilitated in scaled flash memory devices. <P>SOLUTION: The method 210 for creating optical features on a lithography mask which is used when patterning a series of openings of an etch mask, on a semiconductor device wafer is provided. The method includes steps 300, 310 for creating the series of optical features spaced from each other on the lithography mask along a first direction, where the individual optical features have first mask feature dimensions along the first direction that are smaller than the desired first dimension for the openings to be patterned in the etch mask. <P>COPYRIGHT: (C)2010,JPO&INPIT |
