| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of enhancing luminance. <P>SOLUTION: The semiconductor device includes a substrate, a first cladding layer formed on the substrate, an active region formed on the first cladding layer, and a second cladding layer formed on the active region. The active region includes a first type barrier layer that is doped and a second type barrier layer that is undoped. The first type barrier layer is closer to the first cladding layer than the second type barrier layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
