AFFECTING THE THERMOELECTRIC FIGURE OF MERIT (ZT) BY HIGH PRESSURE, HIGH TEMPERATURE SINTERING
摘要
<p>A method for increasing the ZT of a semiconductor, involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the semiconductor, and recovering the semiconductor with an increased ZT.</p>
申请公布号
WO2010080153(A1)
申请公布日期
2010.07.15
申请号
WO2009US30569
申请日期
2009.01.09
申请人
DIAMOND INNOVATIONS, INC.;MALIK, ABDS-SAMI;DONG, YONGKWAN;DISALVO, FRANCIS, J.
发明人
MALIK, ABDS-SAMI;DONG, YONGKWAN;DISALVO, FRANCIS, J.
