发明名称 |
REWRITABLE MEMORY DEVICE |
摘要 |
Memory devices described herein are programmed and erased by physical segregation of an electrically insulating layer out of a memory material to establish a high resistance state, and by re-absorption of at least a portion of the electrically insulating layer into the memory material to establish a low resistance state. The physical mechanism of programming and erasing includes movement of structure vacancies to form voids, and/or segregation of doping material and bulk material, to create the electrically insulating layer consisting of voids and/or dielectric doping material along an inter-electrode current path between electrodes. |
申请公布号 |
US2010177553(A1) |
申请公布日期 |
2010.07.15 |
申请号 |
US20090488795 |
申请日期 |
2009.06.22 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LEE MING-HSIU;CHEN CHIEH-FANG;SHIH YEN-HAO;ZHU YU |
分类号 |
G11C11/00;G11C11/34;H01L47/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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