| 摘要 |
PROBLEM TO BE SOLVED: To provide an image sensor, and a method of manufacturing the same. SOLUTION: This image sensor includes: a semiconductor substrate 100 formed with readout circuits 120 on a unit pixel basis; an interlayer insulation layer 160 formed over the semiconductor substrate 100; wires 150 formed by penetrating the interlayer insulation layer 160 to be respectively connected to the readout circuits 120; and a first metal pattern formed over the interlayer insulation layer 160, a second metal pattern formed over the first metal pattern, and a photodiode pattern formed over the second metal pattern to be respectively connected to the wires 150. COPYRIGHT: (C)2010,JPO&INPIT |
